Title :
A transit time model for thin SOI Si/SiGe HBT
Author :
Fregonese, S. ; Avenier, G. ; Maneux, C. ; Chantre, A. ; Zimmer, T.
Author_Institution :
Lab. de Microelectronique EXL, Univ. Bordeaux 1, Talence, France
Abstract :
A new transit time model for semi-depleted SOI Si/SiGe HBTs is presented. The particular architecture of this SOI HBT involves two modes of operation. Both modes, as well as the transition from one to the other are investigated by a physical description. The corresponding equations are implemented into a compact model. Simulation results from this model are compared to measurements in the DC and AC regime.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; silicon; Si-SiGe; thin SOI heterojunction bipolar transistor; transit time model; BiCMOS integrated circuits; Capacitance; Electric variables; Equations; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor process modeling; Silicon germanium; Space charge;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555228
