Title :
Impact of burn-in effect and base strain on low frequency noise in InGaAsN HBTs
Author :
Yang, Hua ; Niu, Guofu ; Zampardi, Peter J. ; Welser, Roger
Author_Institution :
Dept. of ECE, Auburn Univ., AL, USA
Abstract :
We present the first systematic experimental investigation of low frequency noise in InGaAsN heterojunction bipolar transistors (HBTs). The low frequency noise is examined as a function of base current for InGaAsN HBTs featuring different base strain and burn-in effects.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device noise; wide band gap semiconductors; InGaAsN; base current; base strain; burn-in effect; heterojunction bipolar transistors; low frequency noise; Capacitive sensors; Gallium arsenide; Gold; Heterojunction bipolar transistors; Integrated circuit noise; Low-frequency noise; Noise measurement; Phase noise; Semiconductor device noise; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555236
