DocumentCode
2734870
Title
Identification and analysis of a new BJT parametric mismatch phenomenon
Author
Wils, Nicole ; Tuinhout, Hans ; Ewert, Tony ; van Berkum, Jurgen ; Kaiser, Monja ; Weemaes, Robbert
Author_Institution
Device Modelling Group, Philips Res., Eindhoven, Netherlands
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
224
Lastpage
227
Abstract
In this paper we show that discrepancies that were occasionally observed in the base current mismatch area scaling of a 0.25 μm BICMOS technology are due to a new mismatch phenomenon. We discuss how the cause of the effect was identified through electrical and TEM device analysis. These analyses helped to spot and solve a potential yield limiter in the technology.
Keywords
BiCMOS integrated circuits; bipolar transistors; semiconductor device models; 0.25 micron; BJT parametric mismatch phenomenon; BiCMOS process technology; TEM device analysis; analogue circuits; base current mismatch; bipolar junction transistor; device physics; electrical device analysis; silicon bipolar process technology; Area measurement; BiCMOS integrated circuits; Cause effect analysis; Current measurement; Fluctuations; Geometry; Laboratories; Physics; Silicon; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555237
Filename
1555237
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