• DocumentCode
    2734965
  • Title

    2-D analysis of device parasitics for 800/1000 GHz fT/fmax SiGe HBT

  • Author

    Shi, Yun ; Niu, Guofu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    252
  • Lastpage
    255
  • Abstract
    Using 2D energy balance simulations, various factors limiting fT and fmax in scaled SiGe HBTs are examined. A regional parasitic analysis is made to identify the various intrinsic and extrinsic contributions. The impact of different scaling schemes on fT and fmax are also discussed.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; 1000 GHz; 2D energy balance simulations; 800 GHz; SiGe; device parasitics; heterojunction bipolar transistor; regional parasitic analysis; Current density; Delay effects; Doping profiles; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Silicon germanium; Space charge; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555244
  • Filename
    1555244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734965