DocumentCode :
2734965
Title :
2-D analysis of device parasitics for 800/1000 GHz fT/fmax SiGe HBT
Author :
Shi, Yun ; Niu, Guofu
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
fYear :
2005
fDate :
9-11 Oct. 2005
Firstpage :
252
Lastpage :
255
Abstract :
Using 2D energy balance simulations, various factors limiting fT and fmax in scaled SiGe HBTs are examined. A regional parasitic analysis is made to identify the various intrinsic and extrinsic contributions. The impact of different scaling schemes on fT and fmax are also discussed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; 1000 GHz; 2D energy balance simulations; 800 GHz; SiGe; device parasitics; heterojunction bipolar transistor; regional parasitic analysis; Current density; Delay effects; Doping profiles; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Silicon germanium; Space charge; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
Type :
conf
DOI :
10.1109/BIPOL.2005.1555244
Filename :
1555244
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2734965
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