Investigation of technology scaling effect on SiGe HBT oscillator phase noise using impulse sensitivity function

Author

Tang, Jin ; Niu, Guofu ; Sheridan, David

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

260

Lastpage

263

Abstract

Using impulse sensitivity function (ISF), the upconversion of low-frequency noise to phase noise in SiGe HBTs is investigated as a function of technology scaling. The 1/f noise upconversion under periodic large signal condition is simulated using a cyclostationary model, which is supported by recent SiGe HBT 1/f noise data, and compared with traditional dc current based model. The impact of technology scaling on various ISF is examined, and implications to technology scaling are discussed.

Keywords

1/f noise; circuit noise; frequency convertors; heterojunction bipolar transistors; oscillators; phase noise; semiconductor device models; sensitivity analysis; 1/f noise upconversion; HBT 1/f noise data; HBT oscillator phase noise; SiGe; cyclostationary model; dc current based model; heterojunction bipolar transistor; impulse sensitivity function; low-frequency noise upconversion; periodic large signal condition; technology scaling effect; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise measurement; Oscillators; Phase noise; Semiconductor device noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555246

Filename

1555246