Title :
Photoresponse properties of BaSi2 films on N+-BaSi2/P+-Si tunnel junction for high efficiency thin film solar cells
Author :
Saito, Takanobu ; Matsumoto, Yuta ; Suemasu, Takashi ; Usami, Noritaka
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
Abstract :
We have grown n+-BaSi2/p+-Si tunnel junctions with different BaSi2 template thicknesses on Si(111) by molecular beam epitaxy. Both the epitaxial growth and low resistance as small as 0.05 Ω·cm2 were achieved for a bias voltage of 0.1 V when the template layer thickness was 1 nm. The photoresponse spectra were measured at room temperature for a 360-nm-thick undoped BaSi2 film grown on the tunnel junction. The photoresponsivity reached 74 mA/W at 2.3 eV under a reverse bias of 4 V, the highest value ever reported for semiconducting silicides.
Keywords :
barium compounds; molecular beam epitaxial growth; nitrogen; phosphorus; photovoltaic effects; silicon; solar cells; BaSi2; N-BaSi2-P-Si; epitaxial growth; molecular beam epitaxy; photoresponse property; photoresponse spectra; semiconducting silicide; size 1 nm; size 360 nm; temperature 293 K to 298 K; template layer thickness; thin film solar cells; tunnel junction; voltage 0.1 V; voltage 4 V; Junctions; Molecular beam epitaxial growth; Photovoltaic cells; Silicon; Substrates; Voltage measurement;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614239
