DocumentCode :
2735190
Title :
LT-GaAs Based Photoconductive Antenna Arrays For Pulsed And CW Operation
Author :
Awad, M. ; Nagel, M. ; Kurz, H.
Author_Institution :
Inst. of Semicond. Electron., Aachen
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
49
Lastpage :
49
Abstract :
We present a novel epitaxial lift-off technique for the fabrication of THz antenna array structures on low temperature grown (LT) GaAs. The radiated electric field of the array shows an increase compared to single element emitters, due to the constructive interference of the individual array elements in the emitter far-field. We have demonstrated this emitter in pulsed THz operation, however simulations have shown that this type of structure can also be used for continuous wave (cw) THz generation.
Keywords :
III-V semiconductors; antenna arrays; gallium arsenide; photoconductivity; submillimetre wave generation; CW operation; GaAs; constructive interference; continuous wave THz generation; emitters; epitaxial lift-off technique; photoconductive antenna arrays; pulsed operation; radiated electric field; temperature grown GaAs; Antenna arrays; Antenna measurements; Dipole antennas; Etching; Gallium arsenide; Interference; Photoconducting materials; Photoconductivity; Substrates; Transmission line antennas;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368258
Filename :
4221992
Link To Document :
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