DocumentCode
2735230
Title
Subthreshold operation of MOIS devices: boundary of operation
Author
Parnklang, Jirawath ; Jindajitawat, Phumin ; Titiroongruang, Wisut
Author_Institution
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Volume
3
fYear
2000
fDate
2000
Firstpage
25
Abstract
The boundary of MOIS operating in subthreshold is presented in this article. The MOS transistor-like structure is CMOIS (C_omplementary M_etal O_xide I_ntrinsic-like S_emiconductor), which is prepared on gold-doped silicon. This condition causes changes in many essential characteristics of the device. We demonstrate the analytical parameters and the experimental result of the device which are used to determine the subthreshold regime
Keywords
MOSFET; elemental semiconductors; gold; inversion layers; leakage currents; silicon; CMOIS; MOIS devices; MOS transistor-like structure; Si:Au; analytical parameters; complementary metal oxide intrinsic-like semiconductor; subthreshold operation; Atomic layer deposition; Conductivity; Fabrication; Frequency; Gold; Impurities; MOSFETs; Silicon; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2000. Proceedings
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-6355-8
Type
conf
DOI
10.1109/TENCON.2000.892213
Filename
892213
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