Title :
Subthreshold operation of MOIS devices: boundary of operation
Author :
Parnklang, Jirawath ; Jindajitawat, Phumin ; Titiroongruang, Wisut
Author_Institution :
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
The boundary of MOIS operating in subthreshold is presented in this article. The MOS transistor-like structure is CMOIS (C_omplementary M_etal O_xide I_ntrinsic-like S_emiconductor), which is prepared on gold-doped silicon. This condition causes changes in many essential characteristics of the device. We demonstrate the analytical parameters and the experimental result of the device which are used to determine the subthreshold regime
Keywords :
MOSFET; elemental semiconductors; gold; inversion layers; leakage currents; silicon; CMOIS; MOIS devices; MOS transistor-like structure; Si:Au; analytical parameters; complementary metal oxide intrinsic-like semiconductor; subthreshold operation; Atomic layer deposition; Conductivity; Fabrication; Frequency; Gold; Impurities; MOSFETs; Silicon; Substrates; Voltage;
Conference_Titel :
TENCON 2000. Proceedings
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-6355-8
DOI :
10.1109/TENCON.2000.892213
