• DocumentCode
    2735288
  • Title

    Vacuum Packaging Process Simulation for MEMS Devices

  • Author

    Cheng, Yingjun ; Xu, Gaowei ; Zhu, Dapeng ; Xu, Wei ; Luo, E.

  • Author_Institution
    Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai
  • fYear
    2005
  • fDate
    27-29 June 2005
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    By applying vacuum physics to typical solder reflow vacuum packaging process of MEMS devices, the mathematical and physical model of the vacuum degree change of the cavity to be sealed in related with the gas absorption, desorption, penetration, flowage through little pipe and vapour pressure of materials was established and its arithmetic was ascertained with numerical simulation method. A software module with friendly interface was developed by Visual C++ programming, which comprises results view and parameters input interfaces such as gas parameters input, packaging structure input, reflow time and heating profile input and gas discharging performance input. The veracity of the simulation results was validated by a simulated vacuum packaging experiment, and the effects of the size of capillary pipe and heating profile of solder reflow process on vacuum degree were analyzed based on the simulation results. The parametrical modeling, simulation and optimization design of vacuum packaging process of MEMS devices was realized
  • Keywords
    electronics packaging; micromechanical devices; reflow soldering; vacuum techniques; visual programming; MEMS devices; Visual C++ programming; capillary pipe; heating profile; software module; solder reflow process; vacuum degree change; vacuum packaging process simulation; vacuum physics; Absorption; Analytical models; Arithmetic; Heating; Mathematical model; Microelectromechanical devices; Packaging; Physics; Sealing materials; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Density Microsystem Design and Packaging and Component Failure Analysis, 2005 Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-9292-2
  • Electronic_ISBN
    0-7803-9293-0
  • Type

    conf

  • DOI
    10.1109/HDP.2005.251444
  • Filename
    4017485