Title :
Modeling a Single Doped Quantum Dot Fiber Amplifier
Author :
Cheng, C. ; Zhang, H. ; Wang, X.Y.
Author_Institution :
Zhejiang Univ. of Technol., Hangzhou
Abstract :
A new kind of dopant-semiconductor nanocrystal (quantum dot) doped into a fiber forming a quantum-dot-doped fiber and thereby configuring a quantum-dot-doped fiber amplifier (QDFA) is presented. The bandwidth, gain and noise of the QDFA is simulated by choosing a kind of PbSe quantum dot with 5.5-nm diameter and solving rate equations in a two-level system. The PbSe-QDFA is obviously advantageous in respects of the bandwidth and noise compared with usual erbium-doped fiber amplifiers available.
Keywords :
IV-VI semiconductors; lead compounds; nanostructured materials; optical fibre amplifiers; semiconductor optical amplifiers; semiconductor quantum dots; PbSe; QDFA; dopant; erbium-doped fiber amplifiers; rate equations; semiconductor nanocrystal; single doped quantum dot fiber amplifier; two-level system; Bandwidth; Doped fiber amplifiers; Equations; Erbium-doped fiber amplifier; Noise figure; Optical fiber amplifiers; Optical noise; Optical propagation; Quantum dots; Stimulated emission;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368272
