• DocumentCode
    273549
  • Title

    A 20 GHz injection locked dielectric resonator oscillator

  • Author

    Lucas, J.P. ; Jones, W.J. ; Benn, H.P.

  • Author_Institution
    Bradford Univ., UK
  • fYear
    1989
  • fDate
    10-13 Apr 1989
  • Firstpage
    62
  • Lastpage
    64
  • Abstract
    Reports on the design and performance of an HEMT injection lockable two-port dielectric resonator oscillator. A locking bandwidth of 20 MHz was obtained for an input of -10 dBm, giving an injection power gain of 13 dB. Operation as a self-oscillating mixer has been evaluated. For the test circuit a large conversion loss was found due to mismatch at the IF frequency
  • Keywords
    dielectric resonators; field effect transistor circuits; high electron mobility transistors; microwave oscillators; mixers (circuits); solid-state microwave circuits; 13 dB; 20 GHz; 20 MHz; DRO; HEMT; conversion loss; design; injection locked dielectric resonator oscillator; injection power gain; locking bandwidth; performance; self-oscillating mixer; test circuit; two-port dielectric resonator oscillator;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Frequency Control and Synthesis, 1989. Second International Conference on
  • Conference_Location
    Leicester
  • Type

    conf

  • Filename
    20763