Title :
A 20 GHz injection locked dielectric resonator oscillator
Author :
Lucas, J.P. ; Jones, W.J. ; Benn, H.P.
Author_Institution :
Bradford Univ., UK
Abstract :
Reports on the design and performance of an HEMT injection lockable two-port dielectric resonator oscillator. A locking bandwidth of 20 MHz was obtained for an input of -10 dBm, giving an injection power gain of 13 dB. Operation as a self-oscillating mixer has been evaluated. For the test circuit a large conversion loss was found due to mismatch at the IF frequency
Keywords :
dielectric resonators; field effect transistor circuits; high electron mobility transistors; microwave oscillators; mixers (circuits); solid-state microwave circuits; 13 dB; 20 GHz; 20 MHz; DRO; HEMT; conversion loss; design; injection locked dielectric resonator oscillator; injection power gain; locking bandwidth; performance; self-oscillating mixer; test circuit; two-port dielectric resonator oscillator;
Conference_Titel :
Frequency Control and Synthesis, 1989. Second International Conference on
Conference_Location :
Leicester
