Title :
New technology enables a breakthrough in DC/DC converter design
Author_Institution :
SGS-Thomson Microelectron., London, UK
Abstract :
Until a few years ago the DC to DC converter function had been implemented with discrete transistors and either separate voltage comparators and references or monolithic PWM controller integrated circuits. Being a leader in the power integrated circuit field, SGS-Thomson Microelectronics saw the possibility to integrate the various desirable functions into one monolithic structure including the power stage. The solution was provided by a new technology that SGS-Thomson was developing, called Multipower-BCD (BCD stands for bipolar, CMOS, DMOS). This technology combines low level logic and linear circuitry and power DMOS transistors onto the same piece of silicon. Multipower-BCD is a relatively straightforward 10-14 mask process utilising noncritical manufacturing techniques. The author discusses this new technology
Keywords :
integrated circuit technology; monolithic integrated circuits; power convertors; CMOS; DC/DC converter design; DMOS; Multipower-BCD; SGS-Thomson Microelectronics; bipolar; linear circuitry; low level logic; monolithic structure; power DMOS transistors;
Conference_Titel :
Power Electronics and Variable-Speed Drives, Third International Conference on
Conference_Location :
London
Print_ISBN :
0-85296-364-5