The Optimum Design of A Broad Band Low Noise Amplifier

Author

Gao, Xinyan ; Xie, Wenkai

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

92

Lastpage

92

Abstract

An optimum design of a low noise amplifier (LNA) in S microwave band working at 2-4 GHz is described in this paper. Choosing FHC40LG HEMT (high electronic mobility transistor), the noise factor of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well considering its own minimum noise factor (0.3 dB) and associated gain (15.5 dB). Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.

Keywords

HEMT integrated circuits; MMIC amplifiers; UHF amplifiers; low noise amplifiers; FHC40LG HEMT; Microwave Office simulator; broad band low noise amplifier; frequency 2 GHz to 4 GHz; gain 15.5 dB; high electronic mobility transistor; noise factor; optimum design; stability factor; Bandwidth; Circuit noise; Circuit simulation; Electromagnetic interference; High power amplifiers; Low-noise amplifiers; Microwave FETs; Microwave amplifiers; Microwave circuits; Microwave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368300

Filename

4222034