Title :
Study on parameters extraction from the dark characteristics of LW HgCdTe photodiode
Author :
Quan, Z.J. ; Li, Z.F. ; Hu, W.D. ; Ye, Z.H. ; Hu, X.N. ; Lu, W.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
An data-processing method has been developed to obtain the device parameters from the resistance-voltage (R-V) characteristics measured in long-wavelength HgCdTe photodiode.
Keywords :
cadmium compounds; infrared detectors; mercury compounds; photodiodes; ternary semiconductors; HgCdTe; data-processing method; parameter extraction; photodiode; resistance-voltage characteristics; Curve fitting; Dark current; Electrical resistance measurement; Error analysis; Infrared detectors; Parameter extraction; Photodiodes; Physics; Superconducting photodetectors; Voltage;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368302
