DocumentCode
2735813
Title
The study of silicon thermopile
Author
Muanghlua, R. ; Cheirsirikul, S. ; Supadech, S.
Author_Institution
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Volume
3
fYear
2000
fDate
2000
Firstpage
226
Abstract
This research paper introduces a silicon thermopile sensor, which shows higher Seebeck coefficient than a metal thermopile sensor. The vacuum evaporation technique was used to fabricate this silicon-based thermopile with Titanium as parts of the sensor. By using the concept that different of temperature between junctions would induce voltage that correspond to the temperature different and materials used for the device. This work starting from design, fabricate, and test the device. At the ends of this work, we successfully fabricated the sensor and tested. The results show that the sensor demonstrate higher Seebeck coefficient than the one from metal-base thermopile sensor. For the future work, the different materials will be used to fabricate the thermopile sensor and compared to the Seebeck coefficient of the one from silicon
Keywords
Seebeck effect; elemental semiconductors; silicon; temperature sensors; thermopiles; vacuum deposited coatings; Seebeck coefficient; Si; fabrication; silicon thermopile sensor; vacuum evaporation; Charge carriers; Conducting materials; Equations; Semiconductor materials; Silicon; Temperature sensors; Testing; Thermal sensors; Thermoelectricity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2000. Proceedings
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-6355-8
Type
conf
DOI
10.1109/TENCON.2000.892262
Filename
892262
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