Investigation of the effect of compensation ratio (RC) on solar cells fabricated with solar grade (SoG) czochralski silicon

Author

Camacho-Cuadrado, J. ; Cooper, I.B. ; Ebong, A. ; Bausch, G. ; Tulloch, W. ; Beaucarne, G. ; Good, E. ; Rohatgi, A.

Author_Institution

Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2010

fDate

20-25 June 2010

Abstract

Fabrication and characterization of monocrystalline silicon (Si) solar cells was performed on wafers containing compensated solar grade Si. The wafers used in these experiments were sawn from ingots grown with different compensation ratios. Efficiencies in the range of 17.0-17.8% were obtained from all the different groups of wafers. Efficiency was observed to decrease as compensation ratio increased. After processing, wafers were put under light to observe the effects of light induced degradation (LID). Degradation was seen on all cells, with the greatest impact on wafers with the highest compensation ratio (between 0.5-1% absolute drop in efficiency). Finally, processed wafers were selected from some groups to measure the bulk lifetime. The trend in bulk lifetime follows the trend in efficiency.

Keywords

silicon; solar cells; Si; compensation ratio; czochralski silicon; ingots; light induced degradation; monocrystalline silicon solar cells; solar grade; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5614360

Filename

5614360