• DocumentCode
    2735909
  • Title

    256Ã\x971 doped-InGaAs mesa infrared focal plane array

  • Author

    Lv, Yanqiu ; Han, Bing ; Xu, Yunhua ; Wu, Xiaoli ; Li, Xue ; Gong, Haimei

  • Author_Institution
    Chinese Acad. of Sci., Shanghai
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    99
  • Lastpage
    99
  • Abstract
    We have made 256x1 front-illuminated mesa doped-InGaAs infrared focal plane array (FPA) with two CTIA-structure L128 read out integrate circuit at two sides. The mean peak detectivity of the detectors is 1.33x1012 cmHz1/2W-1 at 278 K. The un uniformity of response is 19.3% at room temperature.
  • Keywords
    III-V semiconductors; focal planes; gallium arsenide; indium compounds; readout electronics; CTIA-structure L128; InGaAs; infrared focal plane array; readout integrate circuit; temperature 278 K; Circuits; Detectors; Indium gallium arsenide; Infrared spectra; Photodiodes; Remote sensing; Semiconductor device noise; Sensor arrays; Superconducting device noise; Superconducting photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0400-2
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368307
  • Filename
    4222041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2735909