DocumentCode :
2735909
Title :
256Ã\x971 doped-InGaAs mesa infrared focal plane array
Author :
Lv, Yanqiu ; Han, Bing ; Xu, Yunhua ; Wu, Xiaoli ; Li, Xue ; Gong, Haimei
Author_Institution :
Chinese Acad. of Sci., Shanghai
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
99
Lastpage :
99
Abstract :
We have made 256x1 front-illuminated mesa doped-InGaAs infrared focal plane array (FPA) with two CTIA-structure L128 read out integrate circuit at two sides. The mean peak detectivity of the detectors is 1.33x1012 cmHz1/2W-1 at 278 K. The un uniformity of response is 19.3% at room temperature.
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; readout electronics; CTIA-structure L128; InGaAs; infrared focal plane array; readout integrate circuit; temperature 278 K; Circuits; Detectors; Indium gallium arsenide; Infrared spectra; Photodiodes; Remote sensing; Semiconductor device noise; Sensor arrays; Superconducting device noise; Superconducting photodetectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368307
Filename :
4222041
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2735909
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