GaAs surface passivation with MBE grown GaS thin film

Author

Okamoto, Naoya ; Hara, Naoki ; Yokoyama, Mitsunori ; Tanaka, Hitoshi

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

fYear

1997

fDate

8-11 Sep 1997

Firstpage

139

Lastpage

142

Abstract

We report on the successful GaAs surface passivation with GaS thin film grown by MBE employing the single precursor, tertiarybutyl-gallium sulfide-cubane ([(t-Bu)GaS]₄). GaAs bandgap PL intensity increased by passivating with GaS and has been maintained for a year. Furthermore, we investigated the relationship between the interface state density and the GaAs surface reconstruction before GaS passivation. The PL intensity for c(4×4)As was largest among the surface reconstructions investigated. Also, a minimum interface state density as low as 5×10¹⁰ eV^-1 cm^-2 was obtained for an Al/GaS/n-GaAs MIS structure of c(4×4)As. In addition, we demonstrated the feasibility of GaS passivation for device applications

Keywords

III-V semiconductors; III-VI semiconductors; gallium arsenide; gallium compounds; interface states; molecular beam epitaxial growth; passivation; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface reconstruction; GaAs; GaS-GaAs; MBE grown GaS thin film; MIS structure; device applications; interface state density; photoluminescence intensity; surface passivation; surface reconstruction; tertiarybutyl-gallium sulfide-cubane; Gallium arsenide; Interface states; MISFETs; MOCVD; Molecular beam epitaxial growth; Passivation; Surface cleaning; Surface reconstruction; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711599

Filename

711599