Low Power 0.18 μm CMOS Dual-Band Front-End

Author

Phansathitwong, Kittichai ; Sjöland, Henrik

Author_Institution

Dept. of Electroscience, Lund Univ.

fYear

2005

fDate

1-3 Nov. 2005

Firstpage

81

Lastpage

84

Abstract

A dual-band CMOS front-end was designed and fabricated in a 0.18 mum CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with capacitive cross coupling (CCC) technique and a passive mixer. The band selection is performed by switching a capacitor in and out of the LNA load, changing the resonance frequency between 2.2GHz and 4.0GHz. The measured noise figure is below 3.5dB for both frequency bands for supply voltages from 1.8V down to 1V. The conversion gain is more than 10dB, and the third order intercept point (IIPs) is above -6dBm. The circuit draws 2.4mA from a 1V supply

Keywords

CMOS analogue integrated circuits; UHF amplifiers; low noise amplifiers; low-power electronics; mixers (circuits); passive networks; 0.18 micron; 1 V; 1.8 V; 2.2 to 4 GHz; 2.4 mA; CMOS dual-band front-end; capacitive cross coupling; capacitor switching; common-gate low noise amplifier; passive mixer; resonance frequency; CMOS process; Capacitors; Dual band; Frequency measurement; Low-noise amplifiers; Mixers; Noise figure; Noise measurement; Resonance; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Asian Solid-State Circuits Conference, 2005

Conference_Location

Hsinchu

Print_ISBN

0-7803-9162-4

Electronic_ISBN

0-7803-9163-2

Type

conf

DOI

10.1109/ASSCC.2005.251812

Filename

4017536