Title :
Initial-On ESD Protection Design with PMOS-Triggered SCR Device
Author :
Ker, Ming-Dou ; Chen, Shih-Hung
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
A novel SCR design with "initial-on" function is proposed to achieve the lowest trigger voltage and the fastest turn-on speed of SCR device for effective on-chip ESD protection. Without using the special native device or any process modification, this initial-on design is implemented by PMOS-triggered SCR device, which can be realized in general CMOS processes. This initial-on SCR design also presents a high enough holding voltage to avoid latchup issue. The new proposed initial-on ESD protection design with PMOS-triggered SCR device has been successfully verified in a 0.25-mum CMOS process
Keywords :
CMOS integrated circuits; electrostatic discharge; thyristors; 0.25 micron; CMOS process; PMOS-triggered SCR device; electrostatic discharge; holding voltage; initial-on ESD protection design; silicon controlled rectifier; trigger voltage; CMOS process; CMOS technology; Circuits; Clamps; Electrostatic discharge; Nanoelectronics; Protection; Robustness; Thyristors; Voltage;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9163-2
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251818
