A comprehensive atomic-level simulator for AlGaAs/GaAs (001) MBE

Author

Dorsey, D.L. ; Mahlingam, K. ; Venkat, R.

Author_Institution

Res. Lab., Wright Patterson AFB, OH, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

147

Lastpage

150

Abstract

A comprehensive, quantitatively accurate, atomic-level simulator for AlGaAs/GaAs (001) MBE has been developed. The kinetic Monte Carlo method was applied within the solid-on-solid approximation, explicitly accounting for deposition, desorption and surface diffusion of both the group III and group V species. In contrast to previous efforts, the kinetic parameters of the model (neighbor interaction energies) were determined by matching model results to gallium desorption transients measured by desorption mass spectrometry (DMS) during GaAs/AlGaAs/GaAs heterointerface formation. The model reproduces these complex transients, and predicts the stoichiometry profile near the GaAs/AlGaAs heterointerface

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; desorption; gallium arsenide; mass spectroscopic chemical analysis; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; stoichiometry; surface diffusion; AlGaAs-GaAs; AlGaAs/GaAs [001] MBE; GaAs; atomic-level simulator; desorption mass spectrometry; heterointerface formation; kinetic Monte Carlo method; molecular beam epitaxy; solid-on-solid approximation; stoichiometry profile; surface diffusion; Artificial intelligence; Atomic layer deposition; Computational modeling; Computer aided manufacturing; Gallium arsenide; III-V semiconductor materials; Kinetic theory; Molecular beam epitaxial growth; Predictive models; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711601

Filename

711601