• DocumentCode
    2736342
  • Title

    Photothermal characterrization by atomic force microscopy around grain boundary in multicrystalline silicon material

  • Author

    Hara, Kenji ; Takahashi, Takuji

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Nonradiative recombination of photocarriers around grain boundaries is important property in multicrystalline silicon material, and has been investigated through local photothermal (PT) measurements by atomic force microscopy. We found that the PT signal was apparently enhanced near the grain boundary, which is probably due to fast nonradiative recombination at the boundary. In addition, relationship between the dependence of PT signal on incident photon energy and the minority carrier diffusion length is discussed.
  • Keywords
    atomic force microscopy; electron-hole recombination; elemental semiconductors; grain boundaries; photoelectricity; photothermal effects; silicon; Si; atomic force microscopy; grain boundary; minority carrier diffusion; multicrystalline silicon material; nonradiative recombination; photocarriers; photothermal characterization; photothermal measurement; Atomic measurements; Grain boundaries; Photovoltaic cells; Radiative recombination; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614390
  • Filename
    5614390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2736342