Title :
An Experimental 1Mb 0.11um 4.5F2 1.8Volt Multilevel Vertical Split Gate Source Side Injection Test Vehicle for Giga-Bit Density NOR Flash Memory
Author :
Tran, Hai V. ; Ly, A. ; Sarin, V. ; Nguyen, S.T. ; Nguyen, Ha Q. ; Hoang, L. ; Hyun Bai Kim ; Nojima, I. ; Lee, Daewoo
Author_Institution :
Bomy Chen Silicon Storage Technol. Inc., Sunnyvale, CA
Abstract :
An experimental 0.11mum 4.5F2 1.8V multilevel 1Mb vertical floating gate split gate source side injection (SSI) test vehicle for Giga-bit NOR flash memory is shown for the first time. Novel coupled sense line programming for 25mV precise charge placement and novel low cell current ~10ua mode source follower sense amplifier is shown to enable high speed high density G-bit MLC NOR flash memory system
Keywords :
NOR circuits; flash memories; 0.11 micron; 1 MByte; 1.8 V; 25 mV; Giga-bit NOR flash memory; coupled sense line programming; current mode source follower sense amplifier; multilevel vertical split gate source side injection test vehicle; Circuits; Explosives; Flash memory; Lab-on-a-chip; Nonvolatile memory; Silicon; Split gate flash memory cells; Testing; Threshold voltage; Vehicles;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9162-4
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251681
