Title :
Low Power 60 dB Gain Range with 0.25 dB Resolution CMOS RF Programmable Gain Amplifier for Dual-band DAB/T-DMB Tuner IC
Author :
Kim, Tae Wook ; Kim, Bonkee ; Cho, Youngho ; Kim, Seyeob ; Kim, Boeun ; Lee, Kwyro
Author_Institution :
Integrant Technol., Inc.
Abstract :
Low power CMOS RF digitally programmable gain amplifiers for dual-band (Band-III and L-Band) DAB/T-DMB receiver IC are implemented using 0.18 mum CMOS process. For a stable operation among large interference situation, it is required to have wide gain range and fine resolution in RF domain. In order to meet such requirements, various programmable gain amplifier architectures are proposed. Also employing a differential multiple gated transistor (DMGTR) technique which is a differential circuit gm" cancellation method, maximum 22 dB IIP3 improvement is obtained. The IC exhibits 60 dB gain range with 0.25 dB resolution, 2.7 dB NF, -14 dBm IIP3 and 42 dB voltage gain at 22 mW power consumption for L-Band case, 50 dB gain range with 0.25 dB resolution, 3 dB NF, -5 dBm IIP3 and 28 dB voltage gain for Band-III case at 16mW power consumption
Keywords :
CMOS integrated circuits; UHF amplifiers; circuit tuning; differential amplifiers; low-power electronics; programmable circuits; radio receivers; 0.18 micron; 16 mW; 2.7 dB; 22 mW; 28 dB; 3 dB; 42 dB; 50 dB; 60 dB; Band III; CMOS process; DAB receiver IC; L Band; RF programmable gain amplifier; T-DMB receiver IC; differential circuit gm" cancellation method; differential multiple gated transistor technique; CMOS digital integrated circuits; CMOS integrated circuits; CMOS process; Dual band; Gain; L-band; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Tuners; CMOS; DAB; IIP3; Linearity; PGA;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9163-2
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251683
