2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells

Silicon Heterojunction Interdigitated Back Contact (SHJ-IBC) solar cells were studied by two dimensional modeling using Sentaurus TCAD tools. It was shown that low fill factor caused by the S-shape behavior of experimental J-V curves of standard interdigitated back contact cells can be recovered by making small openings in the intrinsic buffer layer. The small openings in the buffer layer also substantially reduce the influence of the relative dimensions of the silicon strips as when compared to cells with a continuous buffer layer.