The Study of Improving the Performance of HgCdTe Photovoltaic Detectors with Anti-reflection Coating

Author

Liao, Q.J. ; Hu, X.N.

Author_Institution

Chinese Acad. of Sci., Shanghai

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

132

Lastpage

132

Abstract

Thls paper presents a method to improve HgCdTe detectors´ performance by anti-reflection coating. Back-illuminated HgCdTe photovoltaic detectors have been fabricated on molecular beam epitaxy (MBE) HgCdTe layer on top of GaAs substrate by ion implantation doping. ZnS film is deposited on the surface of GaAs substrate by magnetron sputtering. With this AR coating, the black body detectivity, responsivity and quantum efficiency have the increase of 41%, 45% and 100% respectively. That is a great help to improve the property of HgCdTe detectors.

Keywords

III-VI semiconductors; antireflection coatings; gallium arsenide; ion implantation; mercury compounds; molecular beam epitaxial growth; photodetectors; sputtered coatings; zinc compounds; GaAs; HgCdTe; ZnS; antireflection coating; back-illuminated photovoltaic detectors; black body detectivity; ion implantation doping; magnetron sputtering; molecular beam epitaxy; Coatings; Detectors; Doping; Gallium arsenide; Ion implantation; Molecular beam epitaxial growth; Photovoltaic systems; Solar power generation; Substrates; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368340

Filename

4222074