Investigation of transparent conducting oxide/Si junction for the emitter wrap through solar cells

We have investigated properties of ITO/Si with shallow doped emitter for the increasing fill factor of emitter wrap through (EWT) solar cells. The ITO is prepared by DC magnetron sputter on p-type mono-crystalline silicon substrate. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission length method (TLM). As an experimental result, the contact resistance and the series resistance of ITO/Si with shallow doped emitter were obtained 0.0705 Ωcm² and 0.1821 Ωcm², respectively. As a result of analysis by the contact resistance for optimization of ITO layer, the fill factor of EWT solar cells expected to increase above 80%.