DocumentCode
2736577
Title
The Monte Carlo method for semiconductor device simulation
Author
Kelsall, R.W.
Author_Institution
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
fYear
1995
fDate
34792
Firstpage
42430
Lastpage
42434
Abstract
There can be little doubt that the Monte Carlo method for semiconductor device simulation has enormous power as a research tool. It represents a detailed physical model of the semiconductor material(s), and provides a high degree of insight into the microscopic transport processes. However, if the authority ascribed to Monte Carlo models of devices at 1μm feature size is to be maintained for devices below O.1μm, modelling of the fundamental physics must be further improved. And if the Monte Carlo method is to be successful as a semiconductor device design tool, the device model must be made more realistic. Success in the industrial sector depends on this, but also on achieving fast run-times optimisation - where the scope and need for ingenuity is now greatest
Keywords
Monte Carlo methods; semiconductor device models; Monte Carlo method; design; modelling; run-times; semiconductor device simulation; transport processes;
fLanguage
English
Publisher
iet
Conference_Titel
Physical Modelling of Semiconductor Devices, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19950428
Filename
478366
Link To Document