• DocumentCode
    2736577
  • Title

    The Monte Carlo method for semiconductor device simulation

  • Author

    Kelsall, R.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Leeds Univ., UK
  • fYear
    1995
  • fDate
    34792
  • Firstpage
    42430
  • Lastpage
    42434
  • Abstract
    There can be little doubt that the Monte Carlo method for semiconductor device simulation has enormous power as a research tool. It represents a detailed physical model of the semiconductor material(s), and provides a high degree of insight into the microscopic transport processes. However, if the authority ascribed to Monte Carlo models of devices at 1μm feature size is to be maintained for devices below O.1μm, modelling of the fundamental physics must be further improved. And if the Monte Carlo method is to be successful as a semiconductor device design tool, the device model must be made more realistic. Success in the industrial sector depends on this, but also on achieving fast run-times optimisation - where the scope and need for ingenuity is now greatest
  • Keywords
    Monte Carlo methods; semiconductor device models; Monte Carlo method; design; modelling; run-times; semiconductor device simulation; transport processes;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Physical Modelling of Semiconductor Devices, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19950428
  • Filename
    478366