Terahertz pulse generation with LT-GaAs photoconductive antenna

Author

Cui, L.J. ; Zeng, Y.P. ; Zhao, G.Z.

Author_Institution

Chinese Acad. of Sci., Beijing

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

143

Lastpage

143

Abstract

Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250degC on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600degC under As-rich condition. THz emitters were fabricated on this LT-GaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtained with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.

Keywords

III-V semiconductors; carrier lifetime; dipole antennas; gallium arsenide; optical pulse generation; photoconducting devices; submillimetre wave antennas; submillimetre wave generation; time resolved spectroscopy; EPI GEN-II solid-source MBE system; GaAs; THz emission efficiency; THz emitters; bandwidth 2.75 THz; carrier lifetimes; in situ annealing; low-temperature-grown GaAs; photoconductive antenna; photoconductive dipole antenna gaps; pump-probe spectroscopy; semiinsulating GaAs (001) substrate; size 1 mum; spectral bandwidth; temperature 250 C; temperature 600 C; terahertz pulse generation; time 0.469 ps; time 10 min; time 3.759 ps; time domain spectroscopy; time-resolved transient reflection; Antenna measurements; Bandwidth; Charge carrier lifetime; Detectors; Gallium arsenide; Photoconducting materials; Photoconductivity; Pulse generation; Spectroscopy; Superconducting materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368351

Filename

4222085