Title :
Noise Reduction in LNAs Using a Conductive Path to Ground Technique in SiGe Technology
Author :
Alvarado, Javier, Jr. ; Duster, Jon S. ; Kornegay, Kevin T.
Author_Institution :
Cornell Univ., Ithaca, NY
Abstract :
A passive noise suppression technique was implemented on a family of monolithic low-noise amplifiers using a 0.5mum SiGe BiCMOS process with 47GHz fT transistors. This method provides the entire circuit with a conductive path to ground the P-substrate. Near active device regions, noise injection and crosstalk paths are shunted to ground. This technique decreased the LNAs noise figures by 1.88dB, 0.34dB, and 0.82dB at 5.25GHz, 2.45GHz, and 2.14GHz respectively. While DC power consumption is reduced, the gain improved by 5.3dB and 2.5dB at 5.25GHz and 2.14GHz respectively
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; low noise amplifiers; millimetre wave amplifiers; 0.34 dB; 0.5 micron; 0.82 dB; 1.88 dB; 2.14 GHz; 2.45 GHz; 2.5 dB; 47 GHz; 5.25 GHz; BiCMOS process; SiGe; conductive path to ground technique; monolithic low noise amplifiers; noise reduction; passive noise suppression; Active noise reduction; BiCMOS integrated circuits; Circuit noise; Crosstalk; Energy consumption; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Noise reduction; Silicon germanium;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9163-2
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251696
