High Resolution And Affordable HgCdTe IR Staring Arrays

Author

Tribolet, Philippe ; Chorier, Philippe

Author_Institution

SOFRADIR, Chatenay-Malabry

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

166

Lastpage

166

Abstract

Staring array affordability has been the main goal of HgCdTe (Mercury Cadmium Telluride / MCT) infrared (IR) array developments for the last ten years. A lot of progresses have been made concerning the uniformity and the increase in wafer size, the readout circuit functions including Analog to Digital Conversion, the decrease in pixel pitch and the production capacity. Based on CEA-LETI/Sofradir HgCdTe growth process using Molecular Beam Epitaxy (MBE) on Germanium substrate, large HgCdTe wafer sizes were manufactured including an outstanding crystal quality (see fig 1).

Keywords

II-VI semiconductors; infrared detectors; mercury compounds; molecular beam epitaxial growth; optoelectronic devices; HgCdTe; IR staring arrays; analog to digital conversion; crystal quality; germanium substrate; infrared array developments; mercury cadmium telluride; molecular beam epitaxy; pixel pitch; production capacity; readout circuit functions; wafer size; Circuits; Dual band; Germanium; Infrared detectors; Infrared imaging; Molecular beam epitaxial growth; Photoconducting materials; Sensor arrays; Silicon; Thermal loading;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368374

Filename

4222108