DocumentCode :
2736977
Title :
High Resolution And Affordable HgCdTe IR Staring Arrays
Author :
Tribolet, Philippe ; Chorier, Philippe
Author_Institution :
SOFRADIR, Chatenay-Malabry
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
166
Lastpage :
166
Abstract :
Staring array affordability has been the main goal of HgCdTe (Mercury Cadmium Telluride / MCT) infrared (IR) array developments for the last ten years. A lot of progresses have been made concerning the uniformity and the increase in wafer size, the readout circuit functions including Analog to Digital Conversion, the decrease in pixel pitch and the production capacity. Based on CEA-LETI/Sofradir HgCdTe growth process using Molecular Beam Epitaxy (MBE) on Germanium substrate, large HgCdTe wafer sizes were manufactured including an outstanding crystal quality (see fig 1).
Keywords :
II-VI semiconductors; infrared detectors; mercury compounds; molecular beam epitaxial growth; optoelectronic devices; HgCdTe; IR staring arrays; analog to digital conversion; crystal quality; germanium substrate; infrared array developments; mercury cadmium telluride; molecular beam epitaxy; pixel pitch; production capacity; readout circuit functions; wafer size; Circuits; Dual band; Germanium; Infrared detectors; Infrared imaging; Molecular beam epitaxial growth; Photoconducting materials; Sensor arrays; Silicon; Thermal loading;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368374
Filename :
4222108
Link To Document :
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