Title :
A CMOS VCO with Optimized Tune Branches for Zero-IF CDMA Cellular Application in a 0.5μm BiCMOS process
Author :
Yu, Jinhyuck ; Yang, Sung-Gi ; Ko, Sangsoo ; Kim, Woonyun ; Choo, Wooseung ; Park, Byeong-Ha
Author_Institution :
Syst.-LSI Div., Samsung Electron., Yongin
Abstract :
A fully integrated, very-low phase-noise CMOS voltage controlled oscillator (VCO) has been implemented for zero-IF CDMA cellular receiver (Rx) using CMOS transistors in a 0.5mum SiGe BiCMOS process technology. To optimize the phase noise performance, the VCO used the proposed coarse and fine tune branch which employed high-Q accumulation-mode MOS (AMOS) varactors. The measured phase noise is below -133dBc/Hz at 900kHz offset frequency from a 1.762GHz carrier, which yields enough margin for the IS-98 single-tone test requirement. The integrated CDMA cellular Rx including this Rx VCO shows more than 2.5dB single-tone performance margin
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF oscillators; cellular radio; code division multiple access; radio receivers; varactors; voltage-controlled oscillators; 0.5 micron; 1.762 GHz; BiCMOS process; CMOS VCO; CMOS transistors; IS-98 single tone test; SiGe; accumulation-mode MOS varactors; cellular application; coarse tune branch; fine tune branch; very low phase noise; voltage controlled oscillator; zero-IF CDMA; BiCMOS integrated circuits; CMOS process; CMOS technology; Frequency measurement; Germanium silicon alloys; Multiaccess communication; Phase noise; Silicon germanium; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9162-4
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251719
