Title :
Band Offset Measurement Of The ZnS/Si[001] Heterojunction
Author :
Brar, B. ; Steinhoff, R. ; Seabaugh, A. ; Zhou, X. ; Jiang, S. ; Kirk, W.P.
Author_Institution :
Raytheon TI Syst., Dallas, TX, USA
Abstract :
High-quality ZnS layers on silicon have recently been recited by initiating MBE growth on a vicinal Si(001) surface that has been terminated with a single monolayer (ML) of As. We report the first measurement of the electronic transport properties of the ZnS/As(1 ML)/n-Si(001) heterostructure. Temperature-dependent current-voltage measurements show that the transport is characterized by an activation energy of 1.00±0.04 eV for the Si/ZnS conduction band offset. A similar activation energy of 1.02±0.04 eV is obtained for the opposite bias polarity, corresponding to transport over the Al/ZnS Schottky barrier
Keywords :
II-VI semiconductors; conduction bands; elemental semiconductors; interface states; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; zinc compounds; I-V measurements; MBE grown layer; Si; ZnS-Si; activation energy; band offset measurement; electronic transport properties; molecular beam epitaxial layer; temperature-dependent current-voltage measurements; Annealing; Current measurement; Energy measurement; Heterojunctions; Molecular beam epitaxial growth; Photonic band gap; Silicon; Temperature; Voltage; Zinc compounds;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711606
