Band Offset Measurement Of The ZnS/Si[001] Heterojunction

Author

Brar, B. ; Steinhoff, R. ; Seabaugh, A. ; Zhou, X. ; Jiang, S. ; Kirk, W.P.

Author_Institution

Raytheon TI Syst., Dallas, TX, USA

fYear

1997

fDate

8-11 Sept. 1997

Firstpage

167

Lastpage

170

Abstract

High-quality ZnS layers on silicon have recently been recited by initiating MBE growth on a vicinal Si(001) surface that has been terminated with a single monolayer (ML) of As. We report the first measurement of the electronic transport properties of the ZnS/As(1 ML)/n-Si(001) heterostructure. Temperature-dependent current-voltage measurements show that the transport is characterized by an activation energy of 1.00±0.04 eV for the Si/ZnS conduction band offset. A similar activation energy of 1.02±0.04 eV is obtained for the opposite bias polarity, corresponding to transport over the Al/ZnS Schottky barrier

Keywords

II-VI semiconductors; conduction bands; elemental semiconductors; interface states; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; zinc compounds; I-V measurements; MBE grown layer; Si; ZnS-Si; activation energy; band offset measurement; electronic transport properties; molecular beam epitaxial layer; temperature-dependent current-voltage measurements; Annealing; Current measurement; Energy measurement; Heterojunctions; Molecular beam epitaxial growth; Photonic band gap; Silicon; Temperature; Voltage; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711606

Filename

711606