Title :
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Author :
Padovani, Andrea ; Larcher, Luca ; Pirrotta, Onofrio ; Vandelli, Luca ; Bersuker, Gennadi
Author_Institution :
Dipt. di Sci. e Metodi dell´Ing., Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
Abstract :
We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO2. Material structural modifications occurring during the RRAM operations, such as conductive filament (CF) creation and disruption, are accounted for. The model describes the complex processes leading to a formation of the CF and its dependence on both electrical conditions (e.g., current compliance, voltage stress, and temperature) and device characteristics (e.g., electrodes material and dielectric thickness).
Keywords :
forming processes; hafnium compounds; integrated circuit modelling; leakage currents; resistive RAM; HfO2; HfOx RRAM devices; charge carrier; conductive filament creation; current compliance; device characteristics; dielectric thickness; electrical conditions; electrodes material; hafnium oxide-based resistive random access memory devices; ion transport; leakage current; material structural modifications; microscopic level; voltage stress; Dielectrics; Hafnium compounds; Ions; Microscopy; Switches; Temperature; Temperature measurement; Conductive filament (CF); HfO₂; HfO2; RESET; SET; forming; resistive random access memory (RRAM); resistive switching; trap-assisted tunneling (TAT); trap-assisted tunneling (TAT).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2418114
