Title :
(Pd, Ti, Au)-based ohmic contacts to p- and n-doped In0.53 Ga0.47As
Author :
Chong, W.K. ; Chor, E.F. ; Heng, C.H. ; Chua, S.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The electrical characteristics and stability of Pd, Ti/Pd, Ti/Pd/Au and Pd/Ti/Pd/Au ohmic contacts to p- and n-doped In0.53 Ga0.47As have been investigated. A thin contacting Pd layer has been found to be crucial to the formation of a low resistance contact to p+-InGaAs. On the contrary, a Ti contacting layer is desirable in contacts to n+-InGaAs, Pd(100 Å)/Ti(200 Å)/Pd(200 Å)/Au(2000 Å) has yielded a lowest specific contact resistance (ρc) of 9.61×10-6 Ω-cm2 to p+-InGaAs after a 350°C-20s anneal and has demonstrated sufficient stability as contact to the thin base region of InP-based HBTs. The lowest ρc of 2.54×10-7 Ω-cm2 to n+-InGaAs was achieved by Ti(200 Å)/Pd(200 Å)/Au(2000 Å) after a 400°C-20s anneal
Keywords :
III-V semiconductors; annealing; contact resistance; gallium arsenide; gold; indium compounds; ohmic contacts; palladium; titanium; 20 s; 350 C; 400 C; Pd-In0.53Ga0.47As; Pd-Ti-Pd-Au-In0.53Ga0.47As; Ti-Pd-Au-In0.53Ga0.47As; Ti-Pd-In0.53Ga0.47As; annealing; contact resistance; electrical characteristics; low resistance contact; ohmic contacts; stability; Annealing; Contact resistance; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Metallization; Molecular beam epitaxial growth; Ohmic contacts; Stability; Surface morphology;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711607
