Title :
Fabrication and Characterization of White Light Emitting Diodes Based on ZnO Nano-Rods Grown on p-Si
Author :
Rahman, M.M. ; Klason, P. ; Naveed, H.A. ; Willander, M.
Author_Institution :
Gothenburg Univ., Gothenburg
Abstract :
Recently zinc oxide (ZnO) has drawn attention as it exhibits promising properties for making optoelectronic devices, biosensors. In this paper we will present our recent results from research work on the fabrication of light emitting diodes (LEDs) based on n-ZnO nanorods grown on p-Si by a low temperature chemical approach. The ideality factor of the p- Si/n-ZnO junctions was found to be 5.47+0.67. The high value is probably due to the presence of surface state. Structural, electrical and optical characterization from different processed LEDs will be presented and analyzed.
Keywords :
II-VI semiconductors; light emitting diodes; nanostructured materials; nanotechnology; p-n heterojunctions; photoluminescence; semiconductor device measurement; silicon; surface states; wide band gap semiconductors; zinc compounds; Si; ZnO-Si; current-voltage measurement; electrical properties; ideality factor; low temperature chemical approach; nanorods; optical properties; photoluminescence; semiconductor p-n junctions; structural properties; surface state; white light emitting diode fabrication; Chemicals; Gallium nitride; Heterojunctions; Light emitting diodes; Nanoscale devices; Optical device fabrication; Plasma temperature; Spinning; Substrates; Zinc oxide;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, Texas
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.23
