Fabrication and Characterization of White Light Emitting Diodes Based on ZnO Nano-Rods Grown on p-Si

Author

Rahman, M.M. ; Klason, P. ; Naveed, H.A. ; Willander, M.

Author_Institution

Gothenburg Univ., Gothenburg

fYear

2008

fDate

18-21 Aug. 2008

Firstpage

51

Lastpage

54

Abstract

Recently zinc oxide (ZnO) has drawn attention as it exhibits promising properties for making optoelectronic devices, biosensors. In this paper we will present our recent results from research work on the fabrication of light emitting diodes (LEDs) based on n-ZnO nanorods grown on p-Si by a low temperature chemical approach. The ideality factor of the p- Si/n-ZnO junctions was found to be 5.47+0.67. The high value is probably due to the presence of surface state. Structural, electrical and optical characterization from different processed LEDs will be presented and analyzed.

Keywords

II-VI semiconductors; light emitting diodes; nanostructured materials; nanotechnology; p-n heterojunctions; photoluminescence; semiconductor device measurement; silicon; surface states; wide band gap semiconductors; zinc compounds; Si; ZnO-Si; current-voltage measurement; electrical properties; ideality factor; low temperature chemical approach; nanorods; optical properties; photoluminescence; semiconductor p-n junctions; structural properties; surface state; white light emitting diode fabrication; Chemicals; Gallium nitride; Heterojunctions; Light emitting diodes; Nanoscale devices; Optical device fabrication; Plasma temperature; Spinning; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Conference_Location

Arlington, Texas

Print_ISBN

978-1-4244-2103-9

Electronic_ISBN

978-1-4244-2104-6

Type

conf

DOI

10.1109/NANO.2008.23

Filename

4617005