Title :
Accurate nonlinear modeling and verification of MMIC amplifier
Author :
Hwang, Vincent D. ; Shih, Yi-Chi ; Le, Huy M.
Author_Institution :
Hughes Aircraft Co., Torrance, CA, USA
Abstract :
An accurate MESFET nonlinear model and a reliable model verification approach that uses the on-wafer RF probing method are presented. The nonlinear model is based on small-signal S-parameter characterization of the MESFET at a wide range of bias voltages and is capable of accurately predicting the MMIC amplifier performances at various bias voltages, frequencies, and input power levels (both small and large signals). A model verification scheme is used that was designed to eliminate many measurement uncertainties. In this approach, the nonlinear model is verified by comparing the simulation results of a single-stage MMIC amplifier with the measurement data. The S-parameters of the amplifier´s input and output matching circuits are first accurately measured using the on-wafer RF probes. These data are then input to the simulation program for the complete amplifier simulation. Simulation results for a MMIC amplifier at various frequencies, bias voltages, and power levels agree well with the measurement data.<>
Keywords :
MMIC; Schottky gate field effect transistors; microwave amplifiers; semiconductor device models; MMIC amplifier; S-parameters; SHF; accurate MESFET nonlinear model; frequencies; input power levels; large signals; measurement data; model verification; nonlinear modeling; on-wafer RF probing; output matching circuits; simulation results; single-stage MMIC amplifier; small-signal S-parameter characterization; wide range of bias voltages; Circuit simulation; Impedance matching; MESFETs; MMICs; Measurement uncertainty; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MCS.1989.37258
