Dual-Bias Power Amplifier Designs for WLAN Applications

Author

Huang, Chien-Chang ; Chen, Wei-Ting

Author_Institution

Graduate Inst. of Commun. Eng., Yuan Ze Univ., Taoyuan

fYear

2005

fDate

Nov. 2005

Firstpage

385

Lastpage

388

Abstract

This paper presents the power amplifier (PA) design for IEEE 802.11g WLAN applications by using InGaP/GaAs heterojunction bipolar transistors (HBT) with the dual bias network as the linearizer to improve the output power capability and linearity. The final designed PA utilizes 3.3 V supply voltage producing the maximum power-aided-efficiency (PAE) in 42.8% with 25.5 dBm output power and 18 dB in gain for a 2.4 GHz single-tone stimulus. The measured performances under WLAN modulation signal excitation are 23 dBm output power and 31.5% of PAE with the adjacent-power-ratio (ACPR) less then -20 dBc, satisfying the specifications of the standard

Keywords

IEEE standards; III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; wireless LAN; 18 dB; 2.4 GHz; 3.3 V; HBT; IEEE 802.11g; InGaP-GaAs; WLAN; dual-bias power amplifier; heterojunction bipolar transistors; single-tone stimulus; Gain; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Performance evaluation; Power amplifiers; Power generation; Power measurement; Voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Asian Solid-State Circuits Conference, 2005

Conference_Location

Hsinchu

Print_ISBN

0-7803-9163-2

Electronic_ISBN

0-7803-9163-2

Type

conf

DOI

10.1109/ASSCC.2005.251746

Filename

4017612