Title :
Phototransistors Utilizing Individual WS2 Nanotubes
Author :
Yang, Yang ; Unalan, Husnu Emrah ; Hiralal, Pritesh ; Chremmou, Konstatina ; The, Andrew ; Alexandrou, Ioannis ; Tenne, Reshef ; Amaratunga, Gehan A J
Author_Institution :
Dept. of Eng., Cambridge Univ., Cambridge
Abstract :
We report on the photoresponse characteristics of tungsten disulfide (WS2) nanotubes. Field effect transistors (FETs) were fabricated by using individual WS2 multiwall nanotubes. Photo-sensitivity to visible light is clearly observed, with enhancement of the channel conductivity, carrier mobility and carrier concentration upon illumination in the visible regime. Polarization-sensitive measurements reveal a strong anisotropy of the photocurrent on the polarization angle of the incident light with respect to the WS2 nanotube axis. This nano-scale transistor capable of detecting visible light would have a wide range of applications in medical and consumer electronics.
Keywords :
carrier density; carrier mobility; field effect transistors; nanoelectronics; nanotube devices; photoconductivity; photodetectors; phototransistors; tungsten compounds; WS2; carrier concentration; carrier mobility; channel conductivity; consumer electronic applications; field effect transistors; medical applications; multiwall nanotubes; nanoscale transistor; photocurrent; photoresponse; photosensitivity; phototransistors; polarization incident light angle; polarization-sensitive data; tungsten disulfide nanotubes; visible light; Anisotropic magnetoresistance; Conductivity; FETs; Lighting; Nanotubes; Optical polarization; Photoconductivity; Phototransistors; Transistors; Tungsten;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, Texas
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.32
