• DocumentCode
    2737675
  • Title

    Photomixing at 1.55 μm in ion-irradiated In0.53Ga0.47As on InP

  • Author

    Mangeney, J. ; Chimot, N. ; Crozat, P. ; Blary, K. ; Lampin, J.F. ; Mouret, G. ; Bigourd, D. ; Fertein, E.

  • Author_Institution
    Univ. Paris XI, Orsay
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    208
  • Lastpage
    208
  • Abstract
    We report the first demonstration of a terahertz photomixer made of ion-irradiated In0.53Ga0.47As lattice-matched to InP and fiber-optic coupled with the 1.55 μm wavelength drive lasers. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; wide band gap semiconductors; In0.53Ga0.47As-InP; fiber-optic; ion-irradiated photoconductors; photomixing; terahertz generation; terahertz photomixer; wavelength 1.55 micron; wavelength drive lasers; Bolometers; Frequency measurement; Gallium arsenide; Indium phosphide; Laser excitation; Optical receivers; Optical sensors; Photoconductivity; Power lasers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0399-5
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368416
  • Filename
    4222150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2737675