DocumentCode :
273805
Title :
The design of switched capacitor filter circuits for GaAs MSI technology
Author :
Haigh, D.G. ; Betts, A.K. ; Steptoe, K. ; Taylor, J.T.
Author_Institution :
Univ. Coll. London, UK
fYear :
1989
fDate :
5-8 Sep 1989
Firstpage :
32
Lastpage :
36
Abstract :
Describes a project aimed at the design of high frequency switched capacitor filters in gallium arsenide technology. The project is based on a 2nd order bandpass prototype and has been used as a vehicle for a number of purposes. These include the development of techniques for more realistic device modeling and computer simulation of the system, the development of fully balanced switching circuits, a more detailed analysis of high frequency circuit operation and the application of an optimum design strategy based on this analysis and, finally, advanced layout techniques including scaling down of device geometries as far as possible resulting in MSI packing density. The general approach is to adopt previously developed finite gain insensitive SC circuits in conjunction with moderate gain (40 dB) amplifiers. The design is aiming at a maximum clocking frequency of 250 MHz with a high precision bandpass response centred at a frequency of 20 MHz
Keywords :
III-V semiconductors; band-pass filters; field effect integrated circuits; gallium arsenide; 20 MHz; 250 MHz; 2nd order bandpass prototype; 40 dB; GaAs chip; MSI packing density; balanced switching circuits; bandpass response; clocking frequency; computer simulation; device modeling; finite gain insensitive SC circuits; high frequency circuit operation; high frequency switched capacitor filters; layout techniques; optimum design strategy; scaling down of device geometries; semiconductors; switched capacitor filter circuits;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Circuit Theory and Design, 1989., European Conference on
Conference_Location :
Brighton
Type :
conf
Filename :
51572
Link To Document :
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