Znic Oxide Nanowires with Ultra-Thin and Low-Resistance Seed Layer

Author

Su, Wen-Yan ; Lin, Ching-Fuh

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei

fYear

2008

fDate

18-21 Aug. 2008

Firstpage

193

Lastpage

196

Abstract

We report the zinc oxide (ZnO) nanowires with ultra-thin seed layer by low-cost hydrothermal method. The ultra-thin seed layer consists of ZnO thin film, which is fabricated by sol-gel method and then etched to reduce the thickness by diluted HCI. The resistance along the vertical direction of the ultra-thin seed layer on the indium tin oxide (ITO) glass decreases during the etching process. ZnO nanowires with low resistance in the vertical direction are expected to enable the application of optoelectronic device with better performance.

Keywords

II-VI semiconductors; electrical resistivity; etching; nanowires; semiconductor growth; semiconductor quantum wires; sol-gel processing; wide band gap semiconductors; zinc compounds; ITO; ZnO; etching; hydrothermal method; indium tin oxide glass; low-resistance seed layer; optoelectronic device; resistance; sol-gel method; thin film; ultra-thin seed layer; zinc oxide nanowires; Atomic force microscopy; Etching; Glass; Indium tin oxide; Nanowires; Optical arrays; Photonics; Substrates; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Conference_Location

Arlington, Texas

Print_ISBN

978-1-4244-2103-9

Electronic_ISBN

978-1-4244-2104-6

Type

conf

DOI

10.1109/NANO.2008.64

Filename

4617046