• DocumentCode
    2738160
  • Title

    Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

  • Author

    Jones, E.D. ; Blount, M. ; Chow, W. ; Hou, H. ; Simmons, J.A.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12×1011 cm-2. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV
  • Keywords
    III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; interface states; magneto-optical effects; photoluminescence; renormalisation; semiconductor quantum wells; 1.4 K; 2D-carrier densities; 34 meV; 8 nm; GaAs-AlGaAs; bandgap energy reduction; bandgap renormalization; magnetoluminescence spectroscopy; many body effects; n-type GaAs/AlGaAs single quantum wells; Extraterrestrial measurements; Fiber lasers; Gallium arsenide; Laser transitions; Magnetic field measurement; Optical fibers; Photonic band gap; Shape; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711611
  • Filename
    711611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2738160