• DocumentCode
    2738293
  • Title

    New GaInNAs/GaAs Quantum Well Structure For Long Wavelength Semiconductor Lasers

  • Author

    Miyamoto, Takahiro ; Takada, Tatsuo ; Takeuchi, Ken ; Koyama, Fumio ; Iga, Kenichi

  • Author_Institution
    Tokyo Institute of Technology
  • fYear
    1997
  • fDate
    14-18 July 1997
  • Firstpage
    251
  • Lastpage
    252
  • Keywords
    Diode lasers; Electrons; Gallium arsenide; Lattices; Optical materials; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
  • Conference_Location
    Chiba, Japan
  • Print_ISBN
    0-7803-3889-8
  • Type

    conf

  • DOI
    10.1109/CLEOPR.1997.610928
  • Filename
    610928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2738293