DocumentCode :
2738315
Title :
High-efficiency 1.3/spl mu/m InAsP/InGaAsP Strain-compensated Mqw Laser Diodes Grown By Hybrid Gas Source Mbe And Movpe
Author :
Tsuruoka, K. ; Nakamura, T. ; Anan, T. ; Sugou, S. ; Torikai, T.
Author_Institution :
Kansai Electronics Research Laboratoy, NEC Corporation, 2-9-1 Seiran, Otsu 520, JAPAN
fYear :
1997
fDate :
14-18 July 1997
Firstpage :
253
Lastpage :
253
Keywords :
Anisotropic magnetoresistance; Diode lasers; Epitaxial growth; Epitaxial layers; Molecular beam epitaxial growth; Polarization; Quantum well devices; Spectroscopy; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-3889-8
Type :
conf
DOI :
10.1109/CLEOPR.1997.610930
Filename :
610930
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2738315
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