• DocumentCode
    2738657
  • Title

    Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

  • fYear
    2011
  • fDate
    10-12 Jan. 2011
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    We demonstrate photon antibunching from a single lithographically defined quantum dot. Measurement of the second order autocorrelation function indicates g(2)(0) = 0.395 ± 0.030, below the 0.5 limit necessary for classification as a single photon source.
  • Keywords
    III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; optical fabrication; photon antibunching; semiconductor quantum dots; InGaAs-GaAs; photon antibunching; second order autocorrelation function; single lithographically defined quantum dot; Correlation; Fabrication; Gallium arsenide; Information processing; Measurement by laser beam; Photonics; Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Winter Topicals (WTM), 2011 IEEE
  • Conference_Location
    Keystone, CO
  • Print_ISBN
    978-1-4244-8428-7
  • Type

    conf

  • DOI
    10.1109/PHOTWTM.2011.5730025
  • Filename
    5730025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2738657