DocumentCode :
2738657
Title :
Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot
fYear :
2011
fDate :
10-12 Jan. 2011
Firstpage :
19
Lastpage :
20
Abstract :
We demonstrate photon antibunching from a single lithographically defined quantum dot. Measurement of the second order autocorrelation function indicates g(2)(0) = 0.395 ± 0.030, below the 0.5 limit necessary for classification as a single photon source.
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; optical fabrication; photon antibunching; semiconductor quantum dots; InGaAs-GaAs; photon antibunching; second order autocorrelation function; single lithographically defined quantum dot; Correlation; Fabrication; Gallium arsenide; Information processing; Measurement by laser beam; Photonics; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
Type :
conf
DOI :
10.1109/PHOTWTM.2011.5730025
Filename :
5730025
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2738657
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