Electrically driven single photon sources based on single quantum dot RCLEDs

Author

Stock, Erik ; Lochmann, Anatol ; Unrau, Waldemar ; Schliwa, Andrei ; Bakarov, Askhat K. ; Toropov, Aleksandr I. ; Derebezov, Ilia A. ; Haisler, Vladimir ; Bimberg, Dieter

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin, Germany

fYear

2011

fDate

10-12 Jan. 2011

Firstpage

21

Lastpage

22

Abstract

Electrically driven single photon sources based on single quantum dot RCLED are reported. The device consists of a GaAs layer with low density of InAs QDs, a 60 nm-thick AlGaAs aperture layer with high aluminum content, p and n type GaAs electrical contact layers. The aperture is used to confine the electric current in order to address a single QD.

Keywords

III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; indium compounds; light emitting diodes; light sources; nanocontacts; nanophotonics; optical resonators; semiconductor quantum dots; AlGaAs; GaAs; InAs; aluminum content; electrically driven single photon sources; n-type electrical contact layer; p-type electrical contact layer; quantum dot RCLED; resonant cavity light emitting diode; size 60 nm; Correlation; Excitons; Frequency selective surfaces; Gallium arsenide; Luminescence; Optical pumping; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Winter Topicals (WTM), 2011 IEEE

Conference_Location

Keystone, CO

Print_ISBN

978-1-4244-8428-7

Type

conf

DOI

10.1109/PHOTWTM.2011.5730026

Filename

5730026