InGaN nanowires on silicon: Material characteristics and device applications

Author

Bhattacharya, P. ; Guo, W. ; Zhang, M. ; Heo, J. ; Das, A. ; Jankowski, M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2011

fDate

10-12 Jan. 2011

Firstpage

23

Lastpage

24

Abstract

In this paper we have grown catalyst-free In(Ga)N nanowires and dot-in-nanowire heterostructures on (001) and (111) silicon substrates by plasma-assisted MBE. The nanowires grow in the wurtzite structure with c-axis in the direction of growth. HRTEM data indicate that the nanowires and dot-in-nanowires are defect free. The diameter of the nanowires can be varied from 50-100nm by varying the growth conditions. Photoluminescence spectra is measured at room temperature. The Auger recombination coefficient in these defect-free In(Ga)N nanowires and InGaN/GaN dot-in-nanowires are measured by excitation dependent and time-resolved PL measurements.

Keywords

Auger effect; III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; nanofabrication; nanowires; photoluminescence; plasma deposition; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; (001) silicon substrates; (111) silicon substrates; Auger recombination coefficient; HRTEM; InGaN; InGaN-GaN; Photoluminescence spectra; Si; catalyst-free dot-in-nanowire heterostructures; catalyst-free nanowires heterostructures; growth conditions; plasma-assisted MBE; size 50 nm to 100 nm; temperature 293 K to 298 K; time-resolved PL spectra; wurtzite structure; Cavity resonators; Current measurement; Density measurement; Gallium nitride; Nanowires; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Winter Topicals (WTM), 2011 IEEE

Conference_Location

Keystone, CO

Print_ISBN

978-1-4244-8428-7

Type

conf

DOI

10.1109/PHOTWTM.2011.5730027

Filename

5730027