DocumentCode :
2738761
Title :
Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth
Author :
Mawst, L.J. ; Park, J.H. ; Huang, Y. ; Kirch, J. ; Kim, T. ; Liu, C.-C. ; Nealey, P.F. ; Kuech, T.F. ; Sin, Y. ; Foran, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
fYear :
2011
fDate :
10-12 Jan. 2011
Firstpage :
33
Lastpage :
34
Abstract :
Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.
Keywords :
III-V semiconductors; MOCVD; compressive strength; gallium arsenide; indium compounds; nanolithography; nanomechanics; nanopatterning; photoluminescence; semiconductor quantum dots; tensile strength; InxGa1-xAs; compressively-strained quantum dot; diblock copolymer lithography; diblock copolymer nanopatterning; luminescence; optical properties; selective MOCVD growth; structural properties; tensile-strained quantum dot; Etching; Indium gallium arsenide; Indium phosphide; MOCVD; Nanoscale devices; Quantum dot lasers; Strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
Type :
conf
DOI :
10.1109/PHOTWTM.2011.5730032
Filename :
5730032
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2738761
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