DocumentCode :
2738768
Title :
Selective area epitaxy of ultra-high density InGaN based quantum dots
Author :
Liu, Guangyu ; Zhao, Hongping ; Zhang, Jing ; Park, Joo-Hyung ; Mawst, Luke J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear :
2011
fDate :
10-12 Jan. 2011
Firstpage :
35
Lastpage :
36
Abstract :
Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm-2.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; nanopatterning; nanophotonics; optical films; polymer blends; self-assembly; semiconductor epitaxial layers; semiconductor quantum dots; wide band gap semiconductors; InGaN; metal-organic chemical vapor deposition; selective area epitaxy; self-assembled diblock copolymer nanopatterns; ultrahigh density quantum dots; Chemical vapor deposition; Epitaxial growth; Gallium nitride; Quantum dots; Scanning electron microscopy; Self-assembly;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
Type :
conf
DOI :
10.1109/PHOTWTM.2011.5730033
Filename :
5730033
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2738768
بازگشت